The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Mar. 02, 2021
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Shoko Hanagata, Komatsu Ishikawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0716 (2013.01); H01L 29/41708 (2013.01); H01L 29/7395 (2013.01); H01L 29/868 (2013.01); H01L 29/0692 (2013.01);
Abstract

A semiconductor device includes first and second electrodes, first regions of a first conductivity type, second regions of a second conductivity type, a third region of the first conductivity type, fourth regions of the second conductivity type, fifth regions of the second conductivity type. The first and second regions are on the first electrode. The third region is on the first and second regions. The fourth and fifth regions are on the third region. The second electrode is on the fourth and fifth regions. Every second region is directly below a fifth region.


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