The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Dec. 03, 2021
Applicant:

Effect Photonics B.v., Eindhoven, NL;

Inventor:

Tsjerk Hans Hoekstra, Eindhoven, NL;

Assignee:

EFFECT PHOTONICS B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 23/293 (2013.01); H01L 23/3192 (2013.01);
Abstract

An environmentally protected photonic integrated circuit, PIC, including an indium phosphide-based substrate that is at least partially covered with an epitaxial semiconductor layer. The InP-based substrate and/or the epitaxial layer are covered with a layer stack comprising different non-semiconductor layers. At least a first layer of the layer stack is provided with a through-hole that is arranged at a predetermined location. The InP-based substrate or epitaxial layer being accessible via the through-hole. The PIC including a dielectric protective layer covering the layer stack thereby provides a mechanical coupling structure. The protective layer is configured to protect the PIC from environmental contaminants. An opto-electronic system including the PIC.


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