The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jul. 26, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
Yi-Lun Chou, Suzhou, CN;
Kye Jin Lee, Suzhou, CN;
Han-Chin Chiu, Suzhou, CN;
Xiuhua Pan, Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A semiconductor device includes a nucleation layer, a first buffer layer, a first nitride-based semiconductor layer, and a second buffer layer. The nucleation layer includes a compound which includes a first element. The first buffer layer includes a III-V compound which includes the first element. A concentration of the first element varies with respect to a first reference point within the first buffer layer. The first nitride-based semiconductor layer is disposed on the first buffer layer. The second buffer layer includes a III-V compound which includes a second element different than the first element. The second buffer layer is disposed on and forms an interface with the first nitride-based semiconductor layer. A concentration of the second element varies to cyclically oscillate as a function of a distance within a thickness of the second buffer layer, which occurs with respect to a second reference point within the second buffer layer.