The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Jul. 07, 2023
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Hiroaki Matsubara, Kyoto, JP;

Kaori Sumitomo, Kyoto, JP;

Maki Moroi, Kyoto, JP;

Naoki Kinoshita, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49844 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01);
Abstract

A semiconductor device includes: a chip; a circuit element formed in the chip; an insulating layer formed over the chip so as to cover the circuit element; a multilayer wiring region formed in the insulating layer and including a plurality of wirings laminated and arranged in a thickness direction of the insulating layer so as to be electrically connected to the circuit element; at least one insulating region which does not include the wirings in an entire region in the thickness direction of the insulating layer and is formed in a region outside the multilayer wiring region in the insulating layer; and at least one terminal electrode disposed over the insulating layer so as to face the chip with the at least one insulating region interposed between the at least one terminal electrode and the chip.


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