The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Oct. 13, 2020
Applicant:
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Inventors:
Osamu Tanaka, Akita, JP;
Yoshitaka Kadowaki, Akita, JP;
Assignee:
DOWA Electronics Materials Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/10 (2010.01); H01L 33/22 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02395 (2013.01); H01L 21/0243 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/0262 (2013.01); H01L 21/02658 (2013.01); H01L 33/0062 (2013.01); H01L 33/10 (2013.01); H01L 33/22 (2013.01); H01L 33/305 (2013.01); H01L 33/0093 (2020.05);
Abstract
Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 μm or more and 0.7 μm or less, and the skewness Rsk of the surface is a positive value.