The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Mar. 31, 2023
Nanya Technology Corporation, New Taipei, TW;
Chien-Chung Wang, New Taipei, TW;
Hsih-Yang Chiu, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of manufacturing a capacitor structure includes the following. A first, second, third, fourth, fifth, sixth and seventh portions of a contact layer arrange from periphery to center. A first-conductive layer contacting the first portion forms in an opening. A first-dielectric layer contacting the second portion forms on the first-conductive layer. A second-conductive layer forms on the first-dielectric layer. A second-dielectric layer contacting the third portion forms on the second-conductive layer. A third-conductive layer contacting the fourth portion forms on the second-dielectric layer. A third-dielectric layer contacting the fifth portion forms on the third-conductive layer. A fourth-conductive layer contacting the second-conductive layer forms on the third-dielectric layer. A fourth-dielectric layer contacting the sixth portion forms on the fourth-conductive layer. A fifth-conductive layer contacting the seventh portion forms on the fourth-dielectric layer. A fifth-dielectric layer forms on the fourth-dielectric layer and the fifth-conductive layer.