The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Mar. 24, 2022
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Chan Hui Jeong, Gyeonggi-do, KR;

Dong Hun Kwak, Gyeonggi-do, KR;

Se Chun Park, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); G11C 16/3459 (2013.01); G11C 16/0483 (2013.01);
Abstract

The present disclosure relates to an electronic device. A memory device includes a plurality of memory cells coupled to a plurality of word lines, a voltage generator generating program-related voltages to be applied to the plurality of word lines, an address decoder transferring the program-related voltages to the plurality of word lines, and an operation controller controlling the voltage generator and the address decoder to apply a program voltage to a selected word line among the plurality of word lines, a second pass voltage to adjacent word lines neighboring the selected word line, a first pass voltage to remaining word lines except for the selected word line and the adjacent word lines, and to apply a ground voltage to the selected word line and the first pass voltage to the adjacent word lines during a first period.


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