The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jun. 30, 2022
Western Digital Technologies, Inc., San Jose, CA (US);
Quang Le, San Jose, CA (US);
Cherngye Hwang, San Jose, CA (US);
Brian R. York, San Jose, CA (US);
Randy G. Simmons, San Jose, CA (US);
Xiaoyong Liu, San Jose, CA (US);
Kuok San Ho, Emerald Hills, CA (US);
Hisashi Takano, San Jose, CA (US);
Michael A. Gribelyuk, San Jose, CA (US);
Xiaoyu Xu, San Jose, CA (US);
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a () orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the () orientation. The BiSbE layer may be formed on a texturing layer to ensure the () orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the () orientation of the doped BiSbE layer.