The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Jan. 11, 2021
Applicant:

Nokia Technologies Oy, Espoo, FI;

Inventors:

Marijan Herceg, Osijek, HR;

Tomislav Matic, Osijek, HR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); G01K 3/00 (2006.01); G01K 7/34 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
G01K 7/01 (2013.01); H03F 3/45475 (2013.01); G01K 3/00 (2013.01); G01K 7/34 (2013.01); G01K 2217/00 (2013.01); H03F 2200/129 (2013.01); H03F 2203/45116 (2013.01); H03F 2203/45551 (2013.01);
Abstract

An apparatus may include a transistor, a capacitor, and an operational amplifier. The transistor may have a sub-threshold voltage applied to a gate of the transistor. The capacitor configured to store a first gate-to-source voltage of the transistor while a first switch and a second switch are closed and a third switch is open. The capacitor may be charged to a first gate-to-source voltage of the transistor while the transistor is biased with a first bias current. The operational amplifier may be configured to determine a voltage difference between the first gate-to-source voltage stored in the capacitor and a second gate-to-source voltage of the transistor while the transistor is biased with a second bias current. The operational amplifier may determine the voltage difference while the third switch is closed and the first switch and the second switch are open. The voltage difference may correspond to a temperature of the transistor.


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