The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Feb. 21, 2022
Applicant:
Pixart Imaging Incorporation, Hsinchu, TW;
Inventors:
Ming-Han Tsai, Hsinchu, TW;
Chih-Fan Hu, Hsinchu, TW;
Assignee:
PIXART IMAGING INCORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/02 (2022.01); G01J 5/12 (2006.01); H01L 31/101 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
G01J 5/024 (2013.01); G01J 5/12 (2013.01); H01L 31/101 (2013.01); H01L 31/18 (2013.01);
Abstract
The present invention provides a far infrared (FIR) sensor device formed on a substrate, wherein the FIR sensor device includes: a sensor region, which is formed on the substrate, and is configured to operably sense a far infrared signal; and a sensor dielectric layer, which is formed on the sensor region, wherein a thickness of the sensor dielectric layer is determined by a sacrificial metal layer.
Quick Actions:
Tsai, Ming-Han. (2024). Far infrared (fir) sensor device and manufacturing method thereof and determination method of thickness of sensor dielectric layer thereof (U.S. Patent No. 12123779). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12123779
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile