The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Jul. 06, 2022
Applicant:

Brookhaven Science Associates, Llc, Upton, NY (US);

Inventors:

Charles T. Black, New York, NY (US);

Atikur Rahman, Ridge, NY (US);

Matthew Eisaman, Port Jefferson, NY (US);

Ahsan Ashraf, Port Jefferson, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); G02B 1/118 (2015.01); G03F 7/00 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00031 (2013.01); B81C 1/00111 (2013.01); B82Y 30/00 (2013.01); G02B 1/118 (2013.01); G03F 7/0002 (2013.01); G03F 7/405 (2013.01); H01L 21/0271 (2013.01); H01L 21/0273 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 31/02363 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0149 (2013.01); B82Y 40/00 (2013.01); H01J 2237/334 (2013.01); Y02E 10/50 (2013.01);
Abstract

Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.


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