The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Sep. 15, 2023
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Rainer Markus Schaller, Saal an der Donau, DE;

Klaus Elian, Alteglofsheim, DE;

Horst Theuss, Wenzenbach, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0051 (2013.01); B81C 1/00325 (2013.01); B81B 2203/033 (2013.01); B81B 2207/07 (2013.01); B81B 2207/096 (2013.01); B81C 2203/0118 (2013.01);
Abstract

A method for producing sensor devices includes generating a semiconductor wafer having a plurality of sensor chips, wherein each sensor chip comprises a micro-electromechanical systems (MEMS) structure arranged at a main surface of the semiconductor wafer; forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the MEMS structures and forms a cavity above the corresponding MEMS structure; and singulating the semiconductor wafer into a plurality of sensor devices.


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