The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Sep. 24, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Lili Cheng, Rexford, NY (US);

Ashim Dutta, Clifton Park, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10N 50/01 (2023.02); H10B 61/22 (2023.02);
Abstract

A semiconductor structure comprises a bottom electrode contact, and a memory device comprising a bottom electrode disposed on the bottom electrode contact, at least one memory element layer disposed on the bottom electrode, and a top electrode disposed on the at least one memory element layer. A bit line contact is disposed on the top electrode and extends around sides of the memory device and of the bottom electrode contact. An encapsulation layer is disposed between the bit line contact and the sides of the memory device and of the bottom electrode contact.


Find Patent Forward Citations

Cheng, Lili. (2024). Contact structure formation for memory devices (U.S. Patent No. 12120963). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12120963

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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