The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Apr. 03, 2024
Applicant:

Soochow University, Suzhou, CN;

Inventors:

Yu Chen, Suzhou, CN;

Chengzhao Luo, Suzhou, CN;

Zhenwei Ren, Suzhou, CN;

Assignee:

SOOCHOW UNIVERSITY, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 71/20 (2023.01); H10K 71/12 (2023.01); H10K 50/115 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01);
U.S. Cl.
CPC ...
H10K 71/233 (2023.02); H10K 71/12 (2023.02); H10K 50/115 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02);
Abstract

The invention provides a high-resolution QD pixelated light-emitting film and method for preparing same. The method includes: spin-coating a photoresist on a base; drying and exposing the base; coating a developer at a preset position on the base to obtain a photoresist pattern layer; depositing an insulating layer on the photoresist pattern layer by using silane; removing a photoresist pattern in the insulating layer; spin-coating a polyethylenimine solution on the insulating layer to obtain a PEI layer; and dropping a QD solution on the PEI layer to deposit a QD layer. The hydrophobicity of silane is used to implement dewetting to implement QD pixilation. A PEI solution is spontaneously deposited at the position of a photoresist pattern. Further, the QD solution is adsorbed into the PEI solution to obtain a high-resolution QD pixelated light-emitting film, thereby improving the film forming quality, and passivating surface defects of a QD layer.


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