The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Jun. 14, 2019
Applicant:
Seoul National University R&db Foundation, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 71/00 (2023.01); H10K 85/30 (2023.01); H10K 71/16 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/11 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 50/171 (2023.02); H10K 71/00 (2023.02); H10K 85/30 (2023.02); H10K 71/164 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02); H10K 2102/351 (2023.02);
Abstract
Disclosed are a light emitting device including a perovskite charge transport layer and a method of manufacturing the same. Perovskite thin film of the light emitting device is prepared by co-depositing or sequentially depositing perovskite precursors. Perovskite is directly deposited on the substrate, the thickness of the perovskite thin film is easily controlled, and the energy level is easily adjusted. So, a charge transport layer functioning as a hole injection layer or an electron injection layer in the light emitting device may be manufactured to have suitable energy level.