The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Jan. 21, 2020
Sony Group Corporation, Tokyo, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Takushi Shigetoshi, Kumamoto, JP;
Hideaki Togashi, Kumamoto, JP;
Junpei Yamamoto, Kanagawa, JP;
Shinpei Fukuoka, Kanagawa, JP;
Moe Takeo, Tokyo, JP;
Sho Nishida, Tokyo, JP;
Sony Group Corporation, Tokyo, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G, and g) of transistors (AMP, RST, TG, and TG) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.