The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Feb. 07, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
RESEARCH AND BUSINESS FOUNDATION SUNGKY, Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H01L 29/516 (2013.01); H01L 29/78391 (2014.09); H10B 51/30 (2023.02);
Abstract
A semiconductor memory device capable of improving performance by the use of a charge storage layer including a ferroelectric material is provided. The semiconductor memory device includes a substrate, a tunnel insulating layer contacting the substrate, on the substrate, a charge storage layer contacting the tunnel insulating layer and including a ferroelectric material, on the tunnel insulating layer, a barrier insulating layer contacting the charge storage layer, on the charge storage layer, and a gate electrode contacting the barrier insulating layer, on the barrier insulating layer.