The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Dec. 10, 2021
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Albert Cardona, Santa Barbara, CA (US);

Douglas Jachowski, Santa Cruz, CA (US);

Chris O'Brien, San Diego, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 3/04 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/56 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02228 (2013.01); H03H 3/04 (2013.01); H03H 9/02031 (2013.01); H03H 9/132 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 9/562 (2013.01); H03H 9/564 (2013.01); H03H 9/568 (2013.01); H03H 2003/023 (2013.01); H03H 2003/0442 (2013.01);
Abstract

An acoustic resonator device is formed using a sacrificial layer and a front side etched cavity by forming a recess in a silicon substrate with a trap-rich top layer and filling the recess with sacrificial silicon nitride. A bonding oxide (BOX) layer is formed over the trap-rich layer and the sacrificial silicon nitride filled recess and a piezoelectric plate is bonded to the BOX layer. The sacrificial silicon nitride is then removed to form a cavity by using an etchant introduced through holes in the piezoelectric plate and BOX layer without removing the BOX layer from over the cavity.


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