The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Jun. 29, 2022
Applicant:

Navitas Semiconductor Limited, Dublin, IE;

Inventors:

Marco Giandalia, Marina Del Rey, CA (US);

Jason Zhang, Monterey Park, CA (US);

Hongwei Jia, Aliso Viejo, CA (US);

Daniel M. Kinzer, El Segundo, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); G05F 1/573 (2006.01); H02M 1/32 (2007.01); H02M 3/155 (2006.01); H02M 3/158 (2006.01); H03K 3/012 (2006.01); H02H 9/02 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); G05F 1/573 (2013.01); H02M 1/32 (2013.01); H02M 3/155 (2013.01); H02M 3/158 (2013.01); H03K 3/012 (2013.01); H02H 9/02 (2013.01); H03K 2217/0081 (2013.01);
Abstract

An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.


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