The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Apr. 08, 2021
Applicant:

Xiamen San'an Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Shaohua Huang, Xiamen, CN;

Xiaoqiang Zeng, Xiamen, CN;

Canyuan Zhang, Xiamen, CN;

Jianfeng Yang, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/005 (2013.01); H01L 33/20 (2013.01); H01L 33/382 (2013.01);
Abstract

A light emitting device includes at least one light emitting unit that includes an insulating layer, a first electrically conductive layer, and a semiconductor layer structure having at least one recess. The first electrically conductive layer and the insulating layer extend into the recess. A contact area between a conductive protrusion portion of the first electrically conductive layer and a first-type semiconductor layer of the semiconductor layer structure is larger than 1.5% of an area of a bottom surface of the first-type semiconductor layer. A method for producing the light emitting device is also disclosed.


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