Semiconductor device including vertical mosfet and schottky barrier diode

Abstract

A semiconductor device capable of suppressing forward voltage degradation and loss during turn-on. A vertical MOSFET includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, third semiconductor regions of the second conductivity type, first trenches and second trenches, gate electrodes provided in the first trenches via a gate insulating film, and Schottky metal provided in the second trenches. In a region between an active region through which current flows during an on-state and an edge region that surrounds a periphery of the active region and sustains a breakdown voltage, sidewalls of the second trenches are apart from the second semiconductor regions and the third semiconductor regions.