The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Nov. 07, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyebin Kim, Suwon-si, KR;

Yohan Lee, Suwon-si, KR;

Ho-Jun Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/08 (2006.01); G11C 16/12 (2006.01);
U.S. Cl.
CPC ...
G11C 16/102 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01);
Abstract

A flash memory device is provided. The flash memory device includes: a first memory cell; a second memory cell on the first memory cell; and a third memory cell between the first memory cell and the second memory cell. The first memory cell, the second memory cell and the third memory cell share a channel. The third memory cell is configured to block channel sharing between the first memory cell and the second memory cell based on a channel separation voltage provided in first to k-th program loops. The third memory cell is configured to connect the channel sharing between the first memory cell and the second memory cell based on a channel connection voltage provided to the third memory cell in a (k+1)-th program loop.


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