The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2024
Filed:
Oct. 11, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A nonvolatile memory device having a multi-stack memory block includes: a memory cell array divided into a plurality of memory stacks disposed in a vertical direction; and a control circuit configured to perform a channel voltage equalization operation of the plurality of memory stacks, wherein inter-stack portions are between the plurality of memory stacks, and a channel hole passes through the word lines of each of the plurality of memory stacks. The control circuit determines, as inter-stack word lines, some word lines adjacent to the inter-stack portions among the word lines of each of the plurality of memory stacks and differently controls setup time points for applying a pass voltage, or recovery time points for applying a ground voltage, to the inter-stack word lines, according to sizes of the channel hole of the inter-stack word lines.