The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Jul. 11, 2022
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yu Feng, Beijing, CN;

Libin Liu, Beijing, CN;

Tian Dong, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); G09G 3/3225 (2016.01); G09G 3/3266 (2016.01); G09G 3/3275 (2016.01); G09G 3/3291 (2016.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 3/3225 (2013.01); G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); G09G 3/3291 (2013.01); H10K 59/1213 (2023.02); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0852 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/0251 (2013.01); G09G 2310/061 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0247 (2013.01); G09G 2320/045 (2013.01); G09G 2330/021 (2013.01);
Abstract

A pixel circuit and a driving method therefor, an array substrate and a display device are provided. The pixel circuit includes a driving circuit, a data writing circuit, a first initialization circuit. The driving circuit is configured to control a driving current; the data writing circuit is configured to write a data signal into the control terminal of the driving circuit; the first initialization circuit is configured to apply a first initialization voltage to the control terminal of the driving circuit, and includes a first transistor; the data writing circuit includes a second transistor and the driving circuit includes a third transistor; semiconductor materials of active layers of both the first transistor and the second transistor have a smaller leakage current characteristic than a semiconductor material of a third active layer of the third transistor.


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