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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12114517 B1

PDFFull Text
Date of Patent:
Oct. 08, 2024

Filed:

Mar. 22, 2019

Light-emitting element and light-emitting device

Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Masanobu Mizusaki, Sakai, JP;

Hiroshi Tsuchiya, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, JP;

Attorney:

ScienBiziP, P.C.

Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
H01L 33/26 (2010.01); H10K 50/11 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 59/122 (2023.01); H10K 71/00 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01);
U.S. Cl.
CPC ...
H10K 50/11 (2023.02); H01L 33/26 (2013.01); H10K 50/156 (2023.02); H10K 50/166 (2023.02); H10K 59/122 (2023.02); H10K 71/00 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02);
Abstract

In a light-emitting element, an energy level difference between a second hole transport layer and the light-emitting layer on a side closer to the second hole transport layer is greater than an energy level difference between the light-emitting layer on the side closer to the second hole transport layer and a layer in contact with a side closer to a cathode electrode of the light-emitting layer on the side closer to the second hole transport layer in LUMO level, and an energy level difference between a first electron transport layer and the light-emitting layer on a side closer to the first electron transport layer is greater than an energy level difference between the light-emitting layer on the side closer to the first electron transport layer and a layer in contact with a side closer to an anode electrode of the light-emitting layer on the side closer to the first electron transport layer in HOMO level.

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