The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Jan. 20, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Yukio Kaneda, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 30/30 (2023.01); H01L 27/146 (2006.01); H10K 30/82 (2023.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H10K 30/353 (2023.02); H01L 27/146 (2013.01); H01L 27/1461 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H01L 27/14667 (2013.01); H10K 30/82 (2023.02); H10K 39/32 (2023.02); H01L 27/14665 (2013.01); Y02E 10/549 (2013.01); Y02P 70/50 (2015.11);
Abstract

The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.


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