The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Sep. 11, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngwoo Kim, Hwaseong-si, KR;

Dawoon Jeong, Hwaseong-si, KR;

Tak Lee, Hwaseong-si, KR;

Jungmin Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H10B 41/10 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H10B 41/10 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region. At least one of the second separation regions is in contact with the substrate below the insulating patterns.


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