The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

May. 27, 2021
Applicant:

Enevate Corporation, Irvine, CA (US);

Inventors:

Younes Ansari, Irvine, CA (US);

Liwen Ji, Irvine, CA (US);

Benjamin Park, Irvine, CA (US);

Assignee:

Enevate Corporation, Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/133 (2010.01); H01M 4/02 (2006.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/133 (2013.01); H01M 4/0404 (2013.01); H01M 4/0471 (2013.01); H01M 4/134 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01);
Abstract

Systems and methods for water soluble weak acidic resins as carbon precursors for silicon-dominant anodes may include an electrode coating layer on a current collector, where the electrode coating layer is formed from silicon and a primary resin carbon precursor; wherein the primary resin carbon precursor comprises a water-soluble acidic polyamide imide functionalized with acidic groups and one or more polymeric stabilizing additives. The electrode coating layer may also include a base and/or a surfactant. The electrode coating layer may be more than 70% silicon.


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