The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Sep. 23, 2021
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

François Ayel, Grenoble, FR;

Olivier Saxod, Grenoble, FR;

Norbert Moussy, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0352 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02027 (2013.01); H01L 31/022408 (2013.01); H01L 31/0352 (2013.01); H01L 31/107 (2013.01);
Abstract

A SPAD-type photodiode comprising a depletion area in a first portion of a semiconductor substrate of a first conductivity type and further comprising a gate electrically-insulated from the substrate, extending into the substrate from an upper surface of the substrate, and separating the first portion of the substrate from a second portion. The photodiode further comprises a first region of the second conductivity type extending from the upper surface of the substrate into the second portion.


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