The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Dec. 13, 2021
SK Hynix Inc., Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes: forming an insulating layer over a substrate including a cell region and a peripheral region; forming an opening in the insulating layer by selectively etching the insulating layer in the cell region; forming a plug conductive layer to fill the opening and cover the insulating film; etching the plug conductive layer and the insulating layer in the peripheral region by using a peri-open mask covering the cell region; trimming the peri-open mask to expose the plug conductive layer in a boundary region where the cell region and the peripheral region contact each other; etching the plug conductive layer in the boundary region by using the trimmed peri-open mask; forming a peri-gate conductive layer over the entire surface of the substrate; and etching the peri-gate conductive layer by using a cell open mask.