Method for producing semiconductor capacitors having different capacitance values in a semiconductor substrate

Abstract

In a method for producing semiconductor capacitors having different capacitance values on a common substrate, firstly a partially processed semiconductor substrate is produced as a semi-finished product with hole structures and filled with a layer sequence of a dielectric and an electrically conductive layer—independently of the semiconductor capacitors to be produced subsequently. The production of the semiconductor capacitors having different capacitance values only then takes place in a second production phase by corresponding metallization and structuring. The semiconductor capacitors are then separated along dividing regions through which different groups of holes are separated from one another during the production of the semi-finished product. The method enables a more cost-effective production of semiconductor capacitors having different capacitance values in small numbers of items in make-to-order fabrication (foundry process).