The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Apr. 06, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Daisuke Washio, Kumamoto, JP;

Masahiko Tsujita, Kumamoto, JP;

Hidenori Maeda, Kumamoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/14609 (2013.01); H01L 27/14623 (2013.01);
Abstract

To prevent leakage of incident light from pixels around a pixel region () of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel (). In the pixel region, a plurality of pixels () is arranged, the plurality of pixels including a photodiode formed in a semiconductor substrate () in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens () that focuses the incident light on the photodiode, and a wiring region () having a wiring layer () connected to the photodiode and an insulating layer () that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens () having a curvature different from a curvature of the on-chip lens, and the wiring region.


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