The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Sep. 21, 2021
Avago Technologies International Sales Pte. Limited, Singapore, SG;
Qing Liu, Irvine, CA (US);
Avago Technologies Internationa! Sales Pte. Limited, Singapore, SG;
Abstract
A fin-based field effect transistor (finFET) device may include a fin structure having a first portion, a second portion and a third portion. The finFET device may include a first gate structure disposed over at least part of the first portion, a first source/drain region disposed in the first portion, and a second drain/source region disposed in the third portion. Each of the first, second and third portions may include one or more fin portions. The total fin count in the second portion is fewer than the total fin count in the first portion. The second portion may include a drift region. Methods of fabricating a finFET are also disclosed. The finFET device provides a lower on-resistance and a higher breakdown voltage than conventional finFETs.