The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Apr. 11, 2022
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Noriko Okunishi, Tokyo, JP;
Toshiyuki Hata, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 29/747 (2006.01); H01L 29/78 (2006.01); H02K 11/33 (2016.01); H02M 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/40 (2013.01); H01L 24/37 (2013.01); H01L 24/41 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 23/49562 (2013.01); H01L 29/747 (2013.01); H01L 29/7813 (2013.01); H01L 2224/37124 (2013.01); H01L 2224/37147 (2013.01); H01L 2224/4001 (2013.01); H01L 2224/4007 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/4103 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48245 (2013.01); H01L 2924/13018 (2013.01); H01L 2924/13091 (2013.01); H02K 11/33 (2016.01); H02M 7/003 (2013.01);
Abstract
In order to reduce on-resistance in a semiconductor device to be used for high current applications, the semiconductor device includes a source terminal lead located between a gate terminal lead and a Kelvin terminal lead in plan view and electrically connected with a source terminal via a plurality of wires.