The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Feb. 09, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Ming-Hung Hsieh, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); G11C 8/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28061 (2013.01); H01L 21/02532 (2013.01); H01L 21/28556 (2013.01); H10B 43/27 (2023.02); G11C 8/14 (2013.01);
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; and a first gate stack positioned on the substrate and including: a first gate dielectric layer positioned on the substrate; a first gate protection layer positioned on the first gate dielectric layer and including titanium silicon nitride; a first work function layer positioned on the first gate protection layer; and a first gate filler layer positioned on the first work function layer.