Single event effect mitigation with smart-redundancy

Abstract

Electronic devices and methods for single event effect mitigation are described. The device can include a processor, a memory cell, and an integrated particle sensor. The memory cell can comprise a substrate, a deep well coupled to the substrate, and a ground-coupled well coupled to the deep well. The integrated particle sensor can be coupled between the substrate and the deep well, and the ground-coupled well and the deep well. The integrated particle sensor can be operable to detect an ionizing particle generating the single event effect. The electronic device can be a field-programmable gate array. The method can include detecting an ionizing particle generating a single event effect at a memory cell of the electronic device, switching from the memory cell to a redundant memory cell associated with the memory cell when the single event effect is detected, and reconfiguring the memory cell based on the redundant memory cell.