The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
May. 24, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sungchul Lee, Osan-si, KR;
Kyungjin Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A magneto resistive random access memory (MRAM) device including a spin orbit torque structure including a stack of an oxide layer pattern, a ferromagnetic pattern, and a non-magnetic pattern; and a magnetic tunnel junction (MTJ) structure on the spin orbit torque structure, the MTJ structure including a stack of a free layer pattern, a tunnel barrier pattern, and a pinned layer pattern, wherein the spin orbit torque structure extends in a first direction parallel to an upper surface of the spin orbit torque structure, the ferromagnetic pattern includes a horizontal magnetic material, and the free layer pattern has a magnetization direction in a vertical direction perpendicular to the upper surface of the spin orbit torque structure, the magnetization direction being changeable in response to spin currents generated in the spin orbit torque structure.