The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2024

Filed:

Apr. 02, 2019
Applicant:

Ilika Technologies Limited, Romsey, GB;

Inventors:

Brian Hayden, Lyndhurst, GB;

Louise Turner, Salisbury, GB;

Thomas Risbridger, Southampton, GB;

Thomas Foley, Southampton, GB;

Nadeem Rizvi, Denbighshire, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/38 (2014.01); B23K 26/0622 (2014.01); B23K 26/082 (2014.01); B23K 26/402 (2014.01); B23K 101/36 (2006.01); B23K 103/16 (2006.01); B23K 103/18 (2006.01); H01M 10/058 (2010.01);
U.S. Cl.
CPC ...
B23K 26/38 (2013.01); B23K 26/402 (2013.01); H01M 10/058 (2013.01); B23K 26/0624 (2015.10); B23K 26/082 (2015.10); B23K 2101/36 (2018.08); B23K 2103/172 (2018.08); B23K 2103/18 (2018.08);
Abstract

A method of processing a thin film structure comprising: providing a thin film structure comprising a stack of two or more thin film layers supported on a surface of a substrate, the stack having a depth orthogonal to the substrate surface; and forming a cut through the depth of the stack by using a direct write laser technique to scan a laser beam along a scan path covering an area of a desired cut line on a surface of the stack to ablate material of the stack along the cut line and through the depth of the stack at least to the surface of the substrate; wherein the direct write laser technique is implemented using an ultrashort pulsed laser outputting pulses with a duration of 1000 femtoseconds or less, at a wavelength in the range of 100 to 1500 nm, and delivering a fluence in the range of 50 to 100,000 mJ/cm2.


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