The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Jun. 06, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Geun-won Lim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor memory device including: a common source line; a substrate on the common source line; a plurality of gate electrodes arranged on the substrate and spaced apart from each other in a first direction perpendicular to a top surface of the common source line; a plurality of insulation films arranged among the plurality of gate electrodes; a plurality of channel structures penetrating through the plurality of gate electrodes and the plurality of insulation films in the first direction; and a plurality of residual sacrificial films arranged on the substrate and spaced apart from each other in the first direction, wherein the plurality of gate electrodes are disposed on opposite sides of the plurality of residual sacrificial films.


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Lim, Geun-won. (2024). Semiconductor memory device and a method of manufacturing the same (U.S. Patent No. 12108599). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12108599

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