The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Apr. 04, 2024
Apogee Semiconductor, Inc., Plano, TX (US);
Apogee Semiconductor, Inc., Plano, TX (US);
Abstract
Systems and methods for shutting down a functional circuit in response to a predetermined total ionizing dose of radiation employ at least two redundant sensing circuits operated in integrate and measure phases by one or more sequencer-type hardware or software controllers. NMOS TID sensors having leakage currents increasing monotonically with dose may be biased during integrate phases, with bias voltages or duty cycles adjusted to achieve a calibrated responsivity. TID measurements are compared to a corresponding reference, latched to generate overexpose signals, and tested for agreement. Disagreement triggers remeasurement to prevent erroneous shutdown until a minimum number of overexpose signals agree that TID exceeds the predetermined threshold. A disable circuit accepts the redundant overexpose signals and generates a signal to disable a functional circuit. Redundancy and remeasurement protect against unwarranted shutdowns due to radiation-induced single-event effects or other circuit transients or failures.