The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Dec. 30, 2022
University of Seoul Industry Cooperation Foundation, Seoul, KR;
Hyeok Kim, Seoul, KR;
Abstract
The importance of architectural asymmetry is investigated to improve the output voltage of TENGs with polyester/spandex blend three-dimensional (3D) spacer fabrics. Different types of TENGs are fabricated by stacking the 3D spacer fabrics, polydimethylsiloxane (PDMS) films, and electrodes with different stack configurations. The 3D spacer fabric TENGs fabricated with higher architectural asymmetry show higher output voltages than those fabricated with lower architectural asymmetry. In particular, the TENG with the PDMS/fabric/fabric configuration shows the highest peak-to-peak output voltage among all types. An increase in the TENG output voltage is attributed to the relatively high architectural asymmetry in the device configuration and the relatively high effective density of triboelectric charge.