The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Oct. 16, 2019
Applicant:

Shenzhen Lighting Institute, Shenzhen, CN;

Inventors:

Chao-Chen Cheng, Shenzhen, CN;

Anh Chuong Tran, Shenzhen, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/024 (2006.01); H01S 5/02 (2006.01); H01S 5/028 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0202 (2013.01); H01S 5/02469 (2013.01); H01S 5/028 (2013.01); H01S 5/4025 (2013.01);
Abstract

A semiconductor laser and a fabrication method therefor. The method comprises: providing a heat sink motherboard, and cutting the heat sink motherboard to form a plurality of heat sink substrates () (S); providing an epitaxial wafer () (S); bonding the plurality of heat sink substrates () to the epitaxial wafer () in an array to form a plurality of gaps parallel to the direction of resonant cavities () and perpendicular to the direction of the resonant cavities () (S); dividing the epitaxial wafer () along the gaps to obtain a plurality of laser chips (S); and stacking the plurality of laser chips, and coating the plurality of stacked laser chips to form a plurality of semiconductor lasers (S).


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