The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Sep. 17, 2019
Zhongshan Institute of Modern Industrial Technology, South China University of Technology, Guangdong, CN;
South China University of Technology, Guangdong, CN;
Hong Wang, Guangdong, CN;
Rulian Wen, Guangdong, CN;
Xiaolong Hu, Guangdong, CN;
Quanbin Zhou, Guangdong, CN;
ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangdong, CN;
SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, CN;
Abstract
A preparation method for a metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband includes: growing a contact layer thin film () on a substrate () first, and annealing the grown contact layer thin film () in a nitrogen-oxygen atmosphere at 400° C. to 600° C. through a rapid thermal annealing furnace; growing a first GaOthin film () by sputtering through magnetron sputtering under argon conditions; growing a doped thin film () by sputtering through magnetron sputtering under argon conditions; growing a second GaOthin film () by sputtering through magnetron sputtering under argon conditions; and annealing the grown thin films in a nitrogen-oxygen atmosphere at 500° C. to 600° C. through a rapid thermal annealing furnace, so that permeation, diffusion and fusion occur between thin film materials to form a metal-doped GaOthin film (). A metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband is provided.