The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Jan. 21, 2020
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu, JP;

Inventors:

Koichi Goshonoo, Kiyosu, JP;

Atsushi Miyazaki, Kiyosu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01);
Abstract

A light emitting element includes a substrate and a first light emitting part and a second light emitting part arranged thereon to emit different colored lights. The first light emitting part includes a first laminate structure where a n-type semiconductor film and a first semiconductor film are laminated, a first capping film and a p-type semiconductor film laminated on the first laminate structure. The second light emitting part includes a second laminate structure where the n-type semiconductor film, the first semiconductor film, a first intermediate film, and a second semiconductor film are laminated, a second capping film and the p-type semiconductor film laminated on the second laminate structure, the first capping film being the first intermediate film. A bandgap of the first intermediate film is higher than the first semiconductor film and the second semiconductor film. The bandgap of the second semiconductor film is lower than the first semiconductor film.


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