The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Feb. 28, 2022
Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;
Stefan Tegen, Dresden, DE;
Alessandro Ferrara, Landskron, AT;
Adrian Finney, Villach, AT;
Matthias Kroenke, Dresden, DE;
Christoph Kubasch, Dresden, DE;
Rolf Weis, Dresden, DE;
Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;
Abstract
The disclosure relates to a semiconductor die with a transistor device, which has a channel region formed in a semiconductor body, a gate region aside the channel region, for controlling a channel formation, a drift region formed in the semiconductor body, and a field electrode in a field electrode trench, which extends from a frontside of the semiconductor body vertically into the drift region, wherein an insulating layer is formed on the frontside of the semiconductor body and a frontside metallization is formed on the insulating layer, and wherein a capacitor electrode is formed in the insulating layer, which is conductively connected to at least a portion of the field electrode.