The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Nov. 29, 2022
Renesas Electronics Corporation, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To improve a reliability of a nonvolatile memory cell including a ferroelectric film. The nonvolatile memory cell MC includes a paraelectric film IL formed on a semiconductor substrate SUB, the ferroelectric film FE formed on the paraelectric film IL, a gate electrode GE formed on the ferroelectric film FE, a high dielectric constant film HK formed on the ferroelectric film FE such that the high dielectric constant film HK cover side surfaces of the gate electrode GE, and a source region SR and a drain region DR formed in an upper surface of the semiconductor substrate SUB such that the ferroelectric film FE is sandwiched between the source region SR and the drain region DR. A relative dielectric constant of the high dielectric constant film HK is higher than a relative dielectric constant of the ferroelectric film FE.