The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Dec. 29, 2023
Opnovix Corp., Palo Alto, CA (US);
Michael R. Krames, Palo Alto, CA (US);
OPNOVIX CORP., Palo Alto, CA (US);
Abstract
InAlGaN semiconductor structures having optoelectronic elements characterized by epitaxial layers having different in-plane a-lattice parameters and different InN mole fractions are disclosed. The active regions are configured to emit radiation in different wavelength ranges and are characterized by strain states within about 1% to 2% of compressive strain. The epitaxial layers are grown on patterned InAlGaN seed regions on a single substrate, where the relaxed InGaN growth layers provide (0001) InAlGaN growth surfaces characterized by different in-plane a-lattice parameters and different InN mole fractions. InAlGaN semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and in display applications.