The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Jul. 17, 2019
Brillnics Singapore Pte. Ltd., Singapore, SG;
Tohoku Techno Arch Co., Ltd., Miyagi, JP;
Shunsuke Okura, Tokyo, JP;
Isao Takayanagi, Tokyo, JP;
Kazuya Mori, Tokyo, JP;
Ken Miyauchi, Tokyo, JP;
Shigetoshi Sugawa, Miyagi, JP;
BRILLNICS SINGAPORE PTE. LTD., Singapore, SG;
TOHOKU TECHNO ARCH CO., LTD., Miyagi, JP;
Abstract
One object of the present invention is to provide a solid-state imaging device, a method for fabricating a solid-state imaging device, and an electronic apparatus that implement both a wide dynamic range and a high sensitivity. A storage capacitor serving as a storage capacitance element includes a first electrode and a second electrode on a second substrate surface side. The first electrode is formed of a p+ region (the second conductivity type semiconductor region) formed in the surface of a second substrate surface of a substrate, and the second electrode is formed above the second substrate surface so as to be opposed at a distance to the first electrode in the direction perpendicular to the substrate surface. The first electrode and the second electrode are arranged so as to spatially overlap with a photoelectric conversion part in the direction perpendicular to the substrate surface.