The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Oct. 10, 2023
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Atsushi Umezaki, Kanagawa, JP;

Hiroyuki Miyake, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G09G 3/20 (2006.01); G09G 3/36 (2006.01); G11C 19/28 (2006.01); H01L 27/02 (2006.01); G09G 3/3266 (2016.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G09G 3/2092 (2013.01); G09G 3/3677 (2013.01); G11C 19/28 (2013.01); H01L 27/0207 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); G09G 3/3266 (2013.01); G09G 3/3674 (2013.01); G09G 2300/0809 (2013.01); G09G 2310/0205 (2013.01); G09G 2310/0248 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/0289 (2013.01); G09G 2310/0291 (2013.01); G09G 2310/061 (2013.01); G09G 2320/0646 (2013.01); G09G 2320/0666 (2013.01);
Abstract

To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode of a transistor which easily deteriorates is connected to a wiring to which a high potential is supplied through a first switching transistor and a wiring to which a low potential is supplied through a second switching transistor; a clock signal is input to a gate electrode of the first switching transistor; and an inverted clock signal is input to a gate electrode of the second switching transistor. Thus, the high potential and the low potential are alternately applied to the gate electrode of the transistor which easily deteriorates.


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