The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Sep. 02, 2020
Applicants:

Wuhan Boe Optoelectronics Technology Co., Ltd., Hubei, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xibin Shao, Beijing, CN;

Yanping Liao, Beijing, CN;

Huibin Guo, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 29/7869 (2013.01);
Abstract

An oxide thin film transistor includes a gate electrode, and a first active layer structure and a second active layer structure arranged subsequently, the first active layer structure includes a first conductive connection portion and a second conductive connection portion arranged oppositely, the second active layer structure includes a third conductive connection portion and a fourth conductive connection portion arranged oppositely, and the second oxide semiconductor pattern respectively coupled to the third conductive connection portion and the fourth conductive connection portion, and an orthographic projection of the first oxide semiconductor pattern on the substrate and an orthographic projection of the second oxide semiconductor pattern on the substrate are both located within an orthographic projection of the gate electrode on the substrate, the second conductive connection portion is coupled to the third conductive connection portion.


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